| 摘要 |
PURPOSE:To improve light emitting efficiency by causing respective layers not only to contain impurities within the specific range of a concentration but also to have each specific thickness. CONSTITUTION:A P-type GaAlAs layer 1 is allowed to contain an impurity concentration which exceeds 0.5X10<17>/cm<3> and an active layer 2 is allowed to contain the impurity concentration of 1-8X10<17>/cm<3>, and an N-type GaAlAs clad layer 3 is allowed to contain the impurity concentration which exceeds 0.5X10<17>/cm<3>; besides, respective layers have each thickness in such a way that the thickness of the layer 1 is 50-200mum and that of the layer 2 is 0.1-2mum and that of the layer 3 is 20-90mum. The light emitting efficiency of these layers is thus 3-4 times more than achieved with conventional layers and electrical characteristics are stabilized as well. |
