| 摘要 |
PURPOSE: To obtain a light emitting device which is possessed of a high band gas and capable of emitting light rays shorter in wavelength and free from distortion and defects by a method wherein an epitaxial layer is grown on a lattice-matching alloy through a metal organic vapor epitaxial(MOVPE) growth method where a composition and temperature simultaneous gradation method is adopted. CONSTITUTION: An epitaxial layer increases in ban gap with increased in a X value, and (Alx Ga1-x )y In1-y P layers 130 and 150 inclined in x and temperature are grown as a transition layer substantially keeping y equal to 0.5 in place of growing a device direct on a GaAs substrate 100. The high-band gap device structure comprises a homo-junction, a hetero-junction, and especially an isolation confined quantum well hetero-structure and is separated into many auxiliary layers. As the auxiliary layers are successively grown, an aluminum composition x increased from zero to a prescribed maximum value, a prescribed high band gap balancing with a device section can be obtained at the time when a last auxiliary layer is finished. By this setup, a hetero structure can by kept free from distortion and defects. |
