| 摘要 |
PURPOSE:To improve surface characteristics, crystal properties, cost, etc., of single crystal diamond layer by controlling a ratio of molar number of carbon atom contained in a carbon-containing compound in a raw material to molar number of hydrogen gas and lattice constant of a single crystal substrate to specific values. CONSTITUTION:A raw material consisting of hydrogen gas 1, carbon-containing compound 2 (e.g. methane gas), diboran gas 3 and inert gas 4, etc., is prepared. Then the raw material is fed to a reactor 6 so that a ratio B/A of molar number B of carbon atom contained in a carbon-containing compound 2 to molar number A of hydrogen gas 1 is 2-10%. On the one hand, a single crystal substrate 8 having a lattice constant a (angstrom) satisfying the formula (A0 is 3.56 angstrom of lattice constant of diamond) is arranged in the reactor 6. Then a raw material gas is decomposed in the reactor 6 by micro wave 7 and a single crystal diamond layer is subjected to epitaxial growth on a single crystal substrate 8 in a vapor phase. |
