发明名称 Process for making electron sources of the field-emission type and devices made from the said sources
摘要 The process of the invention consists in depositing successively on a monocrystalline substrate 1 a dielectric layer 2, a grid layer 3, another dielectric layer 4 made of a different material from that of the first, a cavity is etched into the three layers and a cathode tip 9 is formed on the substrate by selective and faceted epitaxial growth. <IMAGE>
申请公布号 FR2644287(A1) 申请公布日期 1990.09.14
申请号 FR19890003153 申请日期 1989.03.10
申请人 THOMSON CSF 发明人 DIDIER PRIBAT ET CHRISTIAN COLLET;COLLET CHRISTIAN
分类号 H01J1/304;H01J9/02 主分类号 H01J1/304
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