| 摘要 |
<p>PURPOSE:To prevent the deterioration in characteristics due to the contact with melted down solder from occurring by a method wherein a Cu bump is formed on an electrode of a chip and then a plated layer is formed on the topmost part. CONSTITUTION:The formation surface of signal receiving electrode 2 of a sensor chip 1 is coated with polyimide 6 which is soft-baked at specified temperature to form a plated mask of the polyimide 6. Next, a glass mask 7 is brought into hard contact with the surface of the polyimide 6 and then the upper part of the electrode 2 is sensitized by ultraviolet (a) ray exposure. Later, the glass mask 7 is developed using organic solvent spray, etc., so as to form a recession 6a having a vertical sidewall above the electrode 2 in the polyimide 6. Next, when the Cu-electrolytic plating process is performed, Cu is vertically deposited along the recession 6a and the part protruding upward from the polyimide 6 spreads radially to form a mushroom type Cu bump 3 as a whole when the plating process is properly stopped.</p> |
