| 摘要 |
The chemical transfer reaction for indium phosphide (3), using indium trichloride as the transfer agent (4), is used in the fabrication of optoelectronic or integrated optical components (2). In the process, with the aid of a protective screen (1) made of a roughly sawed indium phosphide wafer (1), a smooth course of the process is achieved, and any etching reactions are lessened by the protective shield (1) or become less significant. <IMAGE> |
| 申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
HOEGER, REINER, DR., 8037 OLCHING, DE;MIKLIS, AMALIE, DIPL.-ING. (FH), 8000 MUENCHEN, DE;SCHRAMM, HELMUT, 8122 PENZBERG, DE |
