The invention relates to an epitaxial process in which semiconductor layers are precipitated on substrate wafers held by means of a susceptor from a gas flow in a reactor space. To provide for a uniform deposition of the epitaxial layers on a number of substrate wafers arranged behind one another and adjacently to one another, it is provided that at least one object in the reactor space is arranged with respect to the direction of flow of the gas flow in such a manner that small eddies are generated controlled in the gas flow along the entire susceptor. The first object used for generating eddies is arranged in front of the first substrate wafer. The objects used for generating eddies consist of a heat and deformation-resistant and chemically inert material and preferably extend over the entire width of the reactor space.
