| 摘要 |
PURPOSE:To obtain a surface light emitting type light emitting element capable of tuning light wavelength by stacking, on a semiconductor substrate, a first semiconductor lamination structure body and a second semiconductor lamination structure body with piezo effect. CONSTITUTION:A first semiconductor lamination structure body is constituted of semiconductor layers 12, 13, 14. A second semiconductor lamination structure body is constituted of semiconductors 14, 15, 16. A multilayer film 17 constituted of two periods of Si/SiO2 has reflectivity R=90% in a wavelength region of lambda=1-1.6mum. In the case of four periods, R=95% can be obtained. A part of a substrate 11 is eliminated: the first and the second semiconductor lamination structure bodies where the substrate is eliminated are formed as active regions: these regions are an element structure where light radiated from the light emitting layer 13 is subjected to reflection.interference between the multilayer film 17 and a P-clad layer 12. When the effective length of the second lamination structure body is changed, the effective length of the total element also changes, thereby tuning the wavelength of the emitted light. In order to change the effective length of the second lamination structure body, the piezo effect is used. |
