MANUFACTURE OF SILICON CARBIDE LIGHT-EMITTING DIODE

摘要

PURPOSE:To manufacture a silicon carbide light-emitting diode enabling violet emission having high color purity by using a 4H type silicon carbide substrate as a substrate and setting the growth temperature of an N-type layer and a P-type layer formed on the substrate as high as 1550-1800 deg.C. CONSTITUTION:A silicon carbide light-emitting diode is manufactured in such a manner that a silicon carbide single crystal substrate 5 is dipped into a silicon melt 2 in a crucible 1 composed of graphite and an N-type layer and a P-type layer consisting of a silicon carbide single crystal are liquid-phase epitaxial grown. A 4H type silicon carbide substrate 5 is employed as the substrate 5 at that time while a growth temperature at a time when the N-type layer and the P-type layer are formed is set to 1550-1800 deg.C. Silicon nitride is added to the Si melt 2 as a donor impurity while a small amount of aluminum as an emission center is added when the N-type layer is grown, and Al is added as an acceptor impurity when the P-type layer is grown. Accordingly, the silicon carbide light-emitting diode enabling violet emission having high color purity can be manufactured.