| 摘要 |
PURPOSE:To produce the sputtering target for forming a thin GaN film which is dense and has high strength by subjecting the powder of GaN obtd. by reaction of the superfine powder of Ga2O3 and ammonia to an etching treatment to remove the oxide contained therein, then hot pressing the powder in an inert gaseous atmosphere. CONSTITUTION:The powder of the GaN is previously produced by the reaction of the superfine powder Ga2O3 having <=0.3mum average grain size and the ammonia at the time of producing the target used for forming the thin film of the GaN on a substrate by sputtering. This powder is treated by an etching solution consisting of an acid mixture composed of nitric acid and org. acid, such as acetic acid, at 7:1 to 12:1 to dissolve away the Ga2O3 as the impurity in the GaN powder. The GaN powder is hot pressed under the conditions of 50 to 500kg/cm<2> pressure and 400 to 800 deg.C. The sintered body as the sputtering target for forming the thin GaN film which is dense and is highly strong is thus produced. |
