Three-state, two-output variable RF power divider

摘要

A three-state, two-output R.F. power divider is configured as a microstrip device having an input port and first and second output ports. Between these three ports there is disposed a substantially T-shaped microstrip transmission line structure such that the input port is coupled to a base portion of the T-shaped structure and the first and second output ports are coupled to opposite ends of a top portion of the T-shaped structure. A substantially U-shaped microstrip transmission line structure is intercoupled with the T-shaped structure such that end portions of the U-shaped structure are coupled to the top portion of the T-shaped structure and a bottom portion of the U-shaped structure is coupled to the base portion of the T-shaped structure. A first PIN diode is coupled between a first location of the T-shaped structure and a ground plane brassboard underlying the dielectric layer on which the microstrip metalization is formed. Second and third PIN diodes are coupled between second and third respective locations of the U-shaped structure and the ground plane. Power is selectively coupled from the input port and the two output ports by contollably biasing the shunting action of the the three PIN diodes, such that two diodes operate as shunts, while the other diode remains open.