发明名称 |
Thin oxide sidewall insulators for silicon-over-insulator transistors |
摘要 |
A silicon-over-insulator transistor is provided having a semiconductor mesa (40) overlying a buried oxide (42). Insulating regions (50) are formed at the sides of the semiconductor mesa (40). An oxidizable layer (56) is formed over the mesa's insulating region (46). This oxidizable layer (56) is then anisotropically etched, resulting in oxidizable sidewalls (60). An optional foot (70) may be formed at the bottom edge of the oxidizable sidewalls (76). These oxidizable sidewalls (76) are then oxidized, resulting in a pure oxide sidewall (64). The gate (66) is then formed over the pure oxide sidewalls (64) and a gate oxide (62).
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申请公布号 |
US4956307(A) |
申请公布日期 |
1990.09.11 |
申请号 |
US19880269803 |
申请日期 |
1988.11.10 |
申请人 |
TEXAS INSTRUMENTS, INCORPORATED |
发明人 |
POLLACK, GORDON P.;MATLOUBIAN, MISHEL;SUNDARESAN, RAVISHANKAR |
分类号 |
G21F1/08;H01L21/321;H01L21/336;H01L27/12;H01L29/49;H01L29/78;H01L29/786 |
主分类号 |
G21F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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