| 摘要 |
PURPOSE:To enhance the breakdown strength between an electrode and an Si substrate as well as increasing the adhesive strength of a thermal oxidation film to the Si substrate by forming the electrode to which an interconnector is welded on the thermal-oxidation Si film selectively formed on the Si substrate. CONSTITUTION:A thermal-oxidation Si film 10 is formed on an Si substrate 1 selectively and an electrode 8 is formed on said thermal-oxidation Si film 10. To this electrode 8, an interconnector 9a is welded. After etching an Si nitride film, AR film 5, said thermal-oxidation Si film 10 is formed selectively on the Si substrate 1 by thermal oxidation. As a result, the adhesive strength between the Si substrate 1 and an insulating film can be enhanced as well as the pressure resistance between a welding electrode and the Si substrate can be improved because of the thickness of the insulating film. |
