| 摘要 |
<p>PURPOSE:To reduce defects to produce an electrooptic device of uniform picture elements with a good yield by performing reverse sputtering before deposition of a nonlinear resistance thin film and applying a bias voltage at the time of sputtering. CONSTITUTION:A transparent picture element electrode 42 is deposited by magnetron sputtering, and reverse sputtering is performed after patterning of photo etching. Thereafter, a target made of silicon is subjected to reactive sputtering by a sputtering device or the bias voltage is applied to perform reverse sputtering, and a nonlinear resistance thin film 43 is deposited. A metallic wiring electrode 33 is deposited by magnetron sputtering, or the wiring electrode 44 is deposited by magnetron sputtering after the nonlinear resistance thin film 43 is deposited and washed. Thus, the electrooptic device of high quality is produced with a good yield because picture element defects due to dust, flakes, or the like are reduced and the nonlinear resistance thin film of high density and uniform thickness is formed.</p> |
