发明名称 |
Semiconductor device having an isolation oxide film |
摘要 |
Two trenches are formed at a predetermined distance on a main surface of a semiconductor substrate. An oxide film and a nitride film are successively formed on the main surface of the semiconductor including the inner surfaces of the trenches. After a resist is formed over the whole surface including the inner surfaces of the trenches, the resist is patterned to expose a portion of the nitride film on a side surface of each trench. The exposed portions of the nitride film are removed by using the patterned resist as a mask and thermal oxidation is applied. Then, an isolation oxide film is formed on a region between the trenches and an end of a bird's beak is located on a side surface of each trench and is connected to the oxide film formed in each trench.
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申请公布号 |
US4956692(A) |
申请公布日期 |
1990.09.11 |
申请号 |
US19880266704 |
申请日期 |
1988.11.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OZAKI, HIROJI;YONEDA, MASAHIRO;OGOH, IKUO;OKUMURA, YOSHINORI;WAKAMIYA, WATARU;NAGATOMO, MASAO |
分类号 |
H01L27/10;H01L21/31;H01L21/334;H01L21/76;H01L21/762;H01L21/8242;H01L27/108 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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