| 摘要 |
<p>PURPOSE:To form a capacitor without complicating the process by providing the capacitor between a gate line in the preceding stage on the side, where a transistor TR related to a picture element part is not connected, and the picture element part. CONSTITUTION:Transparent conductive materials 2 and metallic materials A 3 are continuously laminated on an insulating substrate 1, and a first mask is used to pattern them except a gate line 4 and a picture element part 5, and insulating materials 6 and a semiconductor 7 are continuously laminated, and a second mask is used to pattern them. The part of a capacitor 9 is left in this case, and metallic materials B 8 are laminated on them, and a third mask is used to pattern them so that metallic materials A 3 in the picture element part 5 and metallic materials B 8 of the capacitor 9 are brought into contact with each other. Then, the capacitor 9 is formed between metallic materials B 8 and the gate line in the preceding stage through an insulating layer. Thus, the capacitor for holding is easily obtained with a small number of photo processes using a small number of masks.</p> |
