| 摘要 |
PURPOSE:To uniformly stick aluminum with small amount of process by continuously forming stepwise an intermediate insulating film on a channel stopping diffusion layer, a thin gate insulating layer stretching on the channel stopping diffusion layer, and a first thick insulating film. CONSTITUTION:On the surface of an N-type single crystal silicon layer 102 formed on a P-type Si substrate 101, an Al gate MOS transistor Tr and a bipolar transistor Tr of high breakdown voltage are formed. In order to increase the breakdown voltage of the bipolar part, a thick SiO2 film 103 is formed on the silicon layer 102. Source.drain regions 104 of the MOS Tr and a thin SiO2 film 105 interposing between the source.drain regions 104 and turning to a gate are sorrounded by a channel stopping diffusion layer 106 for preventing the inversion of an element. Said film 105 is formed so as to be positioned on the diffusion layer 106. On the diffusion layer 105 and the other part thereof, an SiO2 film 107 whose thickness is of almost an intermediate value between the SiO2 films 103, 105 is formed. These SiO2 films 103, 105, and 107 are formed stepwise. |
