| 摘要 |
<p>PURPOSE:To manufacture a thin film transistor(TFT) capable of operating rapidly in excellent reproducibility without complicating the processes by a method wherein the doping process of a high resistant non-single crystal semiconductor layer, the cutting off process of the doping region and the formation of crystallization accelerating part in the cut off part are respectively performed by the laser beam irradiation. CONSTITUTION:When a high resistant non-single crystal semiconductor layer formed on a semiconductor substrate together with an ITO electrode is irradiated with excimer laser beams 10 in a mixed gas plasma atmosphere containing III group or IV group element, a doping region 5 is formed. Next, when the doping region 5 is cut off in narrow width by laser beam 11 irradiation, a source region 3, a drain region 4 and a cut off part 12 are formed. Then, when the part 12 is irradiated with the other laser beams 14, another part 15 accelerating the crystallization of short channel part is formed so that a TFT in a TFT in short channel length capable of operating rapidly may be manufactured in excellent reproducibility without any complicate process at all. Furthermore, a stagger type TFT for multiple TFTs can be similarly manufactured.</p> |
