| 摘要 |
PURPOSE:To make the parasitic capacity between each electrode as small as possible and improve operating speed, by irradiating light onto the clearance between a gate electrode and source, drain electrodes, thus changing the semiconductor thin film on the part into the state of low resistance. CONSTITUTION:Clearance are provided between the gate electrode 14 and source 15, drain electrode 16, thus perfectly eliminating overlappings between these electrodes, and light is irradiated onto the clearance, thus changing the semiconductor thin film 12 into the state of low resistance resulating in transistor operation. Thus, the operating speeds of TFT and the circuit including it can be contrived to improve by making the parasitic capacity between the gate electrode and source, drain electrodes as small as possible. Besides, since clearances are provided between electrodes, the positioning of these electrodes is facilitated. |
