| 摘要 |
PURPOSE:To measure the mask alignment slip quantity as a continuous quantity with high precision by a method wherein the mask alignment slip is detected by the resistance values in diffused layers formed on a substrate surface conforming to ion implanted in the substrate by ion irradiation using heat treatment. CONSTITUTION:The resistance value RL in an n layer 13a can be measured through the intermediary of an A wiring 19a likewise the resistance value RR in an n layer 13b can be measured using another A wiring 19b. The mask alignment in the process B to be measured in comparison with a reference process A is made by comparing these resistance values RL, RR with each other and if the prccesses A and B are performed without any slip with each other, the widths of n layers 13a, 13b i.e., a1, a2 can be represented by a formula of a1=a2=a (where a is a designed value). On the contrary, if the alignment in the process B with the process A is slipped by epsilonrightward, the widths of the n layers 13a, 13b i.e., a1, a2 can be represented by another formula of a1=a-epsilon, a2=a+epsilon. When the diffused layer width and the diffused layer resistance value are in inverse proportion, this formula can be satisfied. From this formula, the mask alignment slip quantity can be measured as a continuous quantity with high precision. |
