发明名称 |
THREE-DIMENSIONAL DEVICE |
摘要 |
A memory IC (10a) comprises a substrate (transfer-side substrate) (21), and memory cell arrays (71, 72, 73) formed in multilayer on the substrate (21) in order of mention from the lower side of the Figure by thin-film structure transfer. In the thin-film structure transfer method, a thin-film device layer (memory cell array) is formed on a substrate through an isolation layer, the isolation layer is irradiated with illumination light, determination in the isolation layer and/or at the interface is caused to occur, and the thin-film device layer is transferred to the substrate (21). |
申请公布号 |
WO9945593(A1) |
申请公布日期 |
1999.09.10 |
申请号 |
WO1999JP00864 |
申请日期 |
1999.02.24 |
申请人 |
SEIKO EPSON CORPORATION;SHIMODA, TATSUYA;INOUE, SATOSHI |
发明人 |
SHIMODA, TATSUYA;INOUE, SATOSHI |
分类号 |
H01L27/00;G11B5/84;G11C11/401;H01L21/336;H01L21/68;H01L21/762;H01L21/77;H01L21/822;H01L21/8242;H01L21/8244;H01L21/8246;H01L21/84;H01L21/98;H01L23/48;H01L25/065;H01L27/06;H01L27/10;H01L27/105;H01L27/108;H01L27/11;H01L27/12;H01L29/786;H01L31/101;H01L39/02;H01L39/24;H01L43/12;(IPC1-7):H01L27/00 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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