| 摘要 |
<p>A glass deposition viscoelastic flow process for forming planar and semiplanar insulator structures on semiconductor devices (202), which includes feeding vaporized reactants into a reaction chamber at a reaction temperature between 750°-950°C and subjecting the surface of the semiconductor devices to a high reactant velocity. The high reactant velocity allows the formation of a high quality, uniform glass layer (200) at temperatures compatible with the fusion temperature, so that deposition occurs simultaneously with the viscoelastic flow of the glass. The simultaneous deposition and flow provides for topographical planarization substantially free of voids and other layer inconsistencies.</p> |
