| 摘要 |
<p>A reactor vessel (50) for growth of high quality thin films, spatially uniform with respect to both thickness and composition. A chamber encloses the substrate (57) on which films are deposited. A porous inlet gas distributor (54) delivers gas toward the substrate. The distance between the porous distributor and the substrate is small compared to a dimension of the wafer and is selected to minimize the temperature of the porous distributor, thus reducing premature thermal degradation of the reactant gases. The distributor can have a varying thickness to impose non-uniform velocity profile. The distributor can be used to condition gas flow in a plasma assisted CVD process. This design eliminates gas recirculation, while maintaining constant temperature profiles. These attributes along with a very small active volume occupied by reactant gases permit very abrupt changes in composition by rapid switching of reactant gases and allow continuous deposition of multi-layer structures.</p> |
