| 摘要 |
PURPOSE:To retard the developing speed of a photoresist after exposing and to form a part which is not developed by processing the photoresist with a compd., the hydroxyl group of which is an OH group at the time of developing the photoresist by using the positive type resist of a naphthoquinone diazide system which can be exposed by light. CONSTITUTION:The positive type resist is applied on a silicon wafer 1 and is then baked and exposed at the time of forming noncorrected resist patterns 2 and corrected resist patterns 3. Polyoxypropylene glycol is then diluted 20 times with water and is applied on the parts of the patterns 2. The resist is then developed by using a developing soln. prepd. by diluting an AZ developer three times with water to develop the parts of the resist 3 without developing the parts of the resist 2, by which the resist patterns are corrected. The positive type resist is applied on a silicon wafer 4 and is backed and exposed. 'Pluronic(R)' is diluted 20 times with water and is applied on the parts of the developed parts 5. The non-developed parts 6 are not processed and only the parts 5 are developed. |
