| 摘要 |
PURPOSE:To produce a thin unsingle crystal film excellent in carrier transportation characteristic at high film-forming velocity by introducing a gaseous raw material containing hydrogen atoms and helium gas into a vacuum vessel, applying an electric field to the resulting gaseous mixture, under reduced pressure, and initiating electric discharge. CONSTITUTION:One or more kinds among gaseous raw materials containing at least hydrogen atoms in gas molecules, such as SiHn and CHn, and He gas are introduced into a vacuum vessel in a plasma CVD apparatus. Subsequently, an electric field is applied to the resulting gaseous mixture under reduced pressure to initiate electric discharge, by which a thin unsingle crystal film is formed on a base material. For example, an electrode to which a high-frequency electric power source of 1kHz-100MHz frequency is connected is disposed in the vacuum vessel, and a high-frequency electric power of 0.03-1.5W/cm<2> per unit electrode area is impressed on the electrode. By this method, the thin unsingle crystal film having high photo-conductivity can be obtained. |
