| 摘要 |
<p>A method of disposing epitaxial layers of silicon and silicides, on to a substrate or wafer, comprising the following steps: the wafer is transported into a first vacuum area, such as to dispose one or more epitaxial layers at low temperature, on to said wafer, the substrate is transported from that first vacuum area through a second vaccum area to a third vacuum area after said disposition and a layer of silicide is disposed in said third vacuum area.</p> |
