| 发明名称 |
MOS transistor of semiconductor device and method of manufacturing the same |
| 摘要 |
The present invention relates to a MOS transistor of semiconductor device and method of manufacturing the same and, in particular, to MOS a transistor of semiconductor device and method of manufacturing the same which can reduce asymmetry of drain current due to bias of drain current, facilitate shallow junction and reduce the area to a minimum by forming a source/drain.
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| 申请公布号 |
US6008097(A) |
申请公布日期 |
1999.12.28 |
| 申请号 |
US19970989033 |
申请日期 |
1997.12.11 |
| 申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
YOON, YONG SUN;BAEK, KYU HA;NAM, KEE SOO |
| 分类号 |
H01L29/786;H01L21/225;H01L21/28;H01L21/336;H01L21/768;H01L29/423;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/786 |
| 代理机构 |
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