| 摘要 |
<p>PURPOSE:To improve a characteristic by providing a thin film having a property to conduct electrons to the interface between the second and third electrodes provided on a semiconductor thin film pattern as a drain electrode and a source electrode for blocking positive holes. CONSTITUTION:A first electrode pattern 2 provided on an insulating substrate 1 as a gate electrode, a first insulating film 3 provided as a gate insulating film so as to cover this, and a semiconductor thin film pattern 4 provided on this insulating film 3 overlapping the first electrode pattern 2 while having a limitted region for existence, are provided. Further, second and third electrodes 5 and 6 provided on a pattern 4 coating a part thereof while being mutually separated as a drain electrode and a source electrode, are provided. Then, a thin film 10 containing silicon oxide having a property to conduct electrons to the interface between the second and third electrodes 5 and 6 on a semiconductor thin film pattern 4 for blocking positive holes, is provided. Thereby, a process relating to an n-type silicon thin film to be used for electric contact of the drain electrode 5 and the source electrode 6 can be omitted so as to improve a characteristic.</p> |
