| 摘要 |
<p>PURPOSE:To suppress variation in crystallization to the minimum by patterning a semiconductor film to be laser-recrystallized in the shape of a plurality of islands, while making an area of each island under specific value and the ratio of the maximum value to the minimum value of the area under 50. CONSTITUTION:a-Si films 102 are piled on a glass substrate 101, these are separated into a plurality of films by hot etching, next, SiO2 films 103 are deposited, while laser light is irradiated on Si films 102 to be recrystallized for obtaining polycrystalline Si films 108. Next, after removing SiO2 films 103, gate insulating films 104 and a-Si films 105 of a gate electrode are formed, while after patterning both of these, P ions are implanted into the gate electrode, source, drain regions for being given heat treatment to obtain a resistance layer. Further, PSG films 106 as protective films, Al electrode 107 are deposited and these are patterned to obtain a circuit. Here, an area of the semiconductor films 108 to be laser-recrystallized is controlled under 1.6X10<5>mum<2>, while the ratio of the maximum value to the minimum value of an area of that to be used as an active layer of an active element inside these films 108 shall be under 50. Thereby, variation of crystallization of the film can be suppressed for uniformly forming an active element of high performance.</p> |
