| 摘要 |
PURPOSE:To obtain an X-ray mask having a very fine X-ray absorber pattern by a method wherein the fine lines, obtained as the cross section of a film adhered to a substrate, is utilized as a mask pattern. CONSTITUTION:A Ta film 5, as an X ray absorber, is sputter-deposited in the desired film thickness required for the line width of a pattern, another Si substrate 6 is adhered to both sides on which Ta film 5 of the Si substrate 4, where the Ta film is formed, is deposited, using the bonding agent such as epoxy resin and the like. X-ray absorber Ta film 5 is sandwiched with the Si substrates 4 and 6 through the intermediary of a bonding agent 7, and the entire sandwiched film 5 is thinly cut vertical to its film surface, the both surfaces which were cut as above are thinned off by grinding and finished in the prescribed thickness. In this case, the material having a low X-ray transmittance and the material having a high X-ray transmittance are used, and these materials are constituted in such a manner that the X-ray transmittance ratio between two cross-sectional parts will be formed 1:3 or higher against either of wavelengths between 3Angstrom and 30Angstrom . As a result, the X-ray mask, having a fine line pattern of 0.005mum or thereabout can be obtained easily. |
