| 摘要 |
PURPOSE:To prevent the loss of reflected light rays caused by scattering by a method wherein semiconductor possessed of a crystal face orientation different from that of a semiconductor substrate is grown on the side face of a groove which is not shifted from a mask using a organic metal thermal decomposition method, and a film serving as a reflective face is formed on the surface of the semiconductor. CONSTITUTION:A semiconductor board 1 is selectively etched using a mask 2 of a dielectric film formed on the semiconductor substrate 1 to form a groove provided with a side face with no step between the dielectric film and the semiconductor substrate 1, and the groove is filled with a semiconductor layer using an organic metal thermal decomposition method, where the growth of the semiconductor layer on the side face of the groove takes place in a lateral direction besides the growth on the base of the groove at a speed lower than that on the base of the groove. At this point, the semiconductor grown on the side face of the groove overhangs outside of the dielectric film of the mask 2 and a (100) face appears. The growth of the semiconductor layer starts centering on the appeared crystal plane, and the semiconductor protruding like a horn can be grown. By this setup, a planar projection reflective mirror extremely high in reflectivity can be obtained, where the loss of reflected light rays due to scattering hardly happens. |
