发明名称 ION SENSOR
摘要 PURPOSE:To improve insulation sealability and workability by fixing a sensor chip and a leader electrode substrate by interlayer insulating layers in the directions where the respective leader electrodes of the chip and the substrate face each other and connecting the same by anisotropic conductive resins in the apertures provided to the interlayer insulating layers. CONSTITUTION:The sensor chip 1 is formed with the plural leader electrodes 3 of two pieces of ion sensitive electric field effect transistors (ISFET) 2 by using a silicon on sapphire substrate and with an insulating protective film 4 covering the parts thereof exclusive of the front end part by a semiconductor integrating technique. One FET of the ISFET 2 is provided with an oxidation- fixed film 5 and the other FET is provided with a reference film 6 consisting of a deactivated oxygen film. The leader electrode substrate 7 has the plural leader electrodes 8 which correspond, one to one, to the electrodes 3 and the surface thereof exclusive of the front end part is coated with the insulating film 9. The sensor chip 1 and the leader electrode substrate 7 are provided with the interlayer insulating layers 10 having the apertures 11 to surround the electrodes 3, 8. The anisotropic conductive resins 12 are embedded in the apertures 11.
申请公布号 JPH02223855(A) 申请公布日期 1990.09.06
申请号 JP19890044555 申请日期 1989.02.23
申请人 NEC CORP 发明人 KANEKO HIDEKI
分类号 G01N27/414;G01N27/00;G01N27/07 主分类号 G01N27/414
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