| 摘要 |
PURPOSE:To electrochemically measure the quality of high-temp. water by adopting the construction in which pipelines for introducing high-temp. high-pressure water are penetrated through the side faces of a pressure resistant vessel and the high-temp. high-pressure water infilters respective electrodes from the intermediate point of the pipelines. CONSTITUTION:This sensor consists of a semiconductor electrode having a disk-shaped copper electrode 1 for electrical conduction, a semi-conductor electrode having a disk-shaped TiO2 semiconductor 2 and a diffusion joint layer 3, a reference electrode which is provided with a disk-shaped counter electrode 5 on a disk-shaped diaphragm 4 and is welded with silver chloride on a disk-shaped silver plate 6, an electrolyte 9 which is formed of the diaphragm 4, the reference electrode and cylindrical alumina ceramics 8, and a water conduit 10 which introduces the high-temp. high-pressure water into the spaces between the respective electrodes. The semiconductor electrode, the counter electrode and the reference electrode are glass-sealed 11 and are held by alumina ceramics 12 exclusive of the electrode wires for electrical conduction and are housed into the pressure resistant vessel 13. The high-temp. high-pressure water infilters the vessel 13 from both ends of the water conduit 10 welded thereto and is introduced into the space parts between the electrodes. The water quality of a plant is measured in-situ in such a manner. |
