| 摘要 |
PURPOSE:To make it possible to form a deposited film whose contact area with a substrate is small and whose volume is large, in a few number of processes, by a method wherein a hole, which is larger on the side of its opening and is smaller on the side of the substrate, is formed in a resist by exposing the resist to light through a photomask having a light-semishielding part. CONSTITUTION:A resist 2 is formed on a substrate 1 and the above resist 2 is exposed to light through a photomask 6, which has a part 10 of a high light transmittance, a light-semishielding part (a light-semishielding member) 9, by which an incident light is weakened and outputted, and a part 8, with which light is completely shielded. Thereby, a hole 5, which is large on the side of its opening and is small on the side of the substrate, is formed in the above resist 2. After that, a metal is deposited on the above substrate 1 through a resist pattern 4, in which the above hole 5 is formed, to form a deposited film 3a. For example, the above part 9 consists of a porous photoresist, one impregnated with a coloring matter in the above photoresist, an emulsion mask adjusted so as to become a mask of a halftone or a material identical with that for the light-shielding part 8 and is constituted of a fine pattern less than a resolution limit of the resist 2 on the substrate 1 and the like. |
