| 摘要 |
PROBLEM TO BE SOLVED: To provide a CVD system and a method for manufacturing a semiconductor device using the system with which a porous film having stable film quality can be obtained. SOLUTION: In this manufacturing method, while a material gas for an interlayer insulation film is supplied, particles which do not react with the material gas are sprayed over the surface of semiconductor substrate 21 and 22, so that an interlayer insulation film 23, on which particles 24 are dispersed, is formed by the CVD method. Then the interlayer insulation film 23 is heated, so that the particles 24 are gasified and a plurality of cavities are formed in the interlayer insulation film 23a.
|
