| 摘要 |
PROBLEM TO BE SOLVED: To integrate a bipolar transistor and a MOS transistor monolithically without deteriorating characteristics of each element. SOLUTION: A 200 to 500 nm-thick isolation film 103 is formed by selective oxidation of a substrate 101 (LOCOS) to define a region for forming a bipolar transistor, a region (B) for forming an MOS transistor and a specified region on the substrate 101 formed of p-type silicon. A 5 to 50 nm-thick silicon oxide film 104, a 10 to 300 nm-thick silicon nitride film (anti-oxidation film) 105 and a 5 to 50 nm-thick silicon oxide film 106 are formed on the substrate 101. Thereafter, a photoresist pattern 107 with an opening 107a is formed by a known photolithography technique, and a silicon oxide film 106 in the part of the opening 107a is removed by using it as a mask.
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