| 摘要 |
PURPOSE: To avoid defectives due to the bit formation on a silicon surface and the shortcircuit of pn junction by a method wherein the first conductor pattern forms the barrier to silicon migration while the second conductor pattern in contact with the first conductor pattern is composed of a contact layer and an Al layer. CONSTITUTION: Within a semiconductor device composed of an Si substrate 1 provided with several laminar conductor patterns on one side where at least one conductor pattern is composed of Al layers 5, 7 as well as electric conductor contact layers 4, 6 adjacent to the layers 5, 7 and provided between the Al layers 5, 7 and the Si substrate 1, the first conductor patterns 2, 3 adjacent to the surface on one side of the Si substrate 1 form the barrier to Si migration from the Si substrate 1 to the conductor patterns and adjacent to the second conductor patterns 4, 5 which are made of a contact layer 4 and Al layer 5; furthermore, the contact layer 4 is to be made of at least one element out of Hf, Ti and Zr. |
