| 摘要 |
<p>A potential detecting circuit comprises a first MOS transistor (N6, P6) of a first conductivity type whose drain receives an input potential whose absolute which is equal to or lower, in absolute value, than a second potential whose absolute value is higher than that of a first potential, a second MOS transistor of a second conductivity type whose source is connected to the source of the first transistor and gate receives the first potential, a third MOS transistor (N11, P11) of the first conductivity type whose source is connected to the second MOS transistor (P5, N5), source receives a reference potential whose absolute value is lower than that of the first potential, and gate receives the first potential, a detecting potential control block for applying to the first MOS transistor a potential varying in accordance with the input potential, and a potential detect output terminal for providing a detected potential, the potential detect output terminal being a junction between the drains of the second and third MOS transistors.</p> |
