| 摘要 |
PURPOSE:To lengthen operating life time, by epitaxial growing an active layer constituted of GaAlAs. CONSTITUTION:After a current preventing layer 2 groove 9 and clad layer 3 are formed on a P type GaAs substrate 1, the active layer 4 constituted of GaAlAs without P type, N type or conductive tyue is epitaxial grown with a layer thickness of approx. 0.1mum with the rest processes performed as conventional. Thus, the mixed crystal ratio of the clad layers 3, 5 is set higher than that of the active layer 4 to confine carrier into the active layer 4 on the hetero junction interface thereof. |
