Device for characterizing semiconductor samples by photoluminescence with high spatial resolution and at low temperature

摘要

A device is described for characterizing wafers of semiconductor materials by photoluminescence with high spatial resolution and at low temperature, this device comprising at least: (a) a cryostatic vacuum chamber provided with a cooled sample carrier adapted to receive the wafer and provided with at least one window for the transmission of the light beams implied in the photoluminescence process; (b) optical means for forming a luminous spot on the wafer from a laser beam and for transmitting the re-emitted photoluminescence beam to a detector, characterized in that the optical means comprise first optical means for forming on the wafer from the laser beam a wide unfocused luminous spot and second optical means with high resolution for forming with a magnification exceeding unity on the receiving surface of the detector the image of photoluminescence of the surface of the luminous spot, and in that the detector is apt to produce a digitized image thereof.