| 发明名称 |
Semiconductor device with composite electrode |
| 摘要 |
Provided is a semiconductor device having a single continuous wiring layer in which a predetermined portion thereof is made of a semiconductor material, and the remaining portion thereof is made of a metal compound of the semiconductor material. The predetermined portion of the wiring layer preferably constitutes the gate electrode of a field effect transistor.
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| 申请公布号 |
US4954871(A) |
申请公布日期 |
1990.09.04 |
| 申请号 |
US19880147107 |
申请日期 |
1988.01.21 |
| 申请人 |
MIZUTANI, YOSHIHISA;KIMURA, MINORU |
发明人 |
MIZUTANI, YOSHIHISA;KIMURA, MINORU |
| 分类号 |
H01L21/8238;H01L21/3205;H01L21/768;H01L23/52;H01L23/532;H01L27/092;H01L29/49;H01L29/78 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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