| 摘要 |
In a test method of an electrostatic breakdown of a semiconductor device in accordance with the present invention, a plurality of semiconductor devices are disposed at random on a member which has been electrostatically charged with a predetermined voltage, and the semiconductor devices are caused to be discharged while being moved on the member. Then, a test is performed to determine whether an electrostatic breakdown occurs in each of semiconductor devices. The electrical characteristics of each semiconductor device are measured after the charged static electricity has been removed. Each semiconductor device to be tested is incorporated in a package and has lead terminals connected to a semiconductor chip.
|
