| 摘要 |
PURPOSE:To minimize the influence by impurity ions by a method wherein a polycrystalline Si surface protection film with PSG which contacts emitter wiring electrodes via insulation layers, and takes conduction to base electrodes is provided on an insulation film provided on the emitter layer and the base layer which constitute a resin sealed semiconductor device. CONSTITUTION:A P type base region 12 is diffusion-formed on an N type Si substrate 11 serving as a collector, N type emitter regions 13 and 13' are provided therein. Next, the first SiO2 film 14 is adhered over the entire surface including these regions, and further thereon the polycrystalline Si layer 20 with PSG and the second SiO2 film 21 are laminated resulting in the formation. Thereafter, fixed apertures are opened on these lamination bodies, then base electrodes 15, 15' and 15'' and base contacts 19 and 19' are formed on the region 12, and emitter electrodes 17 and 17' and emitter contacts 18 and 18' are provided on the region 13. Thus, leak current does not increase, and the deterioration of hFE becomes less. |
