| 摘要 |
Metal thin film is selectively deposited only on a specified substrate of a matrix by CVD method, in which halide matal gas of metal being chemically deposited, and H2 gas are used as starting gas, and at least a part of the matrix to be deposited with metal thin film is heated to temps., at which the gas is able to effect reaction. At parts of matrix on which metal is not permitted to be vapour deposited, reaction between matrix and starting gas does not occur, as H atoms are not allowed to contact, and at a part of the matrix being deposited with metal, the matrix and the starting gas effect reaction to cause film formation.
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