| 摘要 |
A semiconductor laser device includes an n type first cladding layer and a multi quantum well active layer successively grown on an n type substrate, a p type second cladding layer having a stripe ridge narrower in the neighborhood of the laser cavity facets than within the laser disposed on the active layer, a p type buffer layer containing p type dopants in a higher concentration than in the second cladding layer and disposed on the second cladding layer except on the stripe ridge, an n type current blocking layer disposed on the buffer layer, and a p type contact layer disposed on an upper surface of the stripe ridge and the second cladding layer and the current blocking layer, the multi quantum well being disordered except directly opposite the wider portion of the stripe ridge by the diffusion of p type dopant impurities from the p type buffer layer. |
