Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET,申请号DE19926031832T-传众专利搜索

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发明名称	Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET
摘要
申请公布号	DE69231832(T2)	申请公布日期	2001.11.22
申请号	DE19926031832T	申请日期	1992.07.20
申请人	FUJI ELECTRIC CO., LTD.	发明人	FUJIHIRA, TATSUHIKO
分类号	H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L27/088;H01L29/08	主分类号	H01L21/8234
代理机构		代理人
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