| 摘要 |
PURPOSE:To back up a strength of a protective film and to prevent a crack from being produced by forming a reinforcement film on a protective film, with which a peripheral edge of a metal film arranged and formed on a chip of a semiconductor device is covered, in such a way that a range near the peripheral edge of the metal film is covered and that the metal film is surrounded from the outside. CONSTITUTION:A protective film 4 is used to cut a semiconductor device off from an influence by the open air and is produced by a dense organization such as silicon nitride or the like; however, this organization is hard, causes a crack easily and is damaged easily. Therefore, a reinforcement film 10 is formed on the protective film 4 in such a way that range near a peripheral edge of a comparatively large-sized metal film 3 used for a connection pad or the like is covered and that the metal film 3 is surrounded from the outside. Accordingly, even when a thermal strain is caused in the protective film 4, a strength of the protective film 4 is backed up while a thermal stress is being alleriated by the reinforcement film 10. A metal whose adhesion property to the protective film 4 is good, e.g. titanium, chromium, or a resin, e.g. a polyimide resin, is used as the reinforcement film 10. Thereby, it is possible to prevent a crack and damage of the protective film 4. |
