发明名称 |
FORMING METHOD FOR GLASS FILM SUING PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To confine the number of particles of >=1μm adhered on a substrate to a prescribed number or below when forming a glass film by a plasma enhanced CVD method. SOLUTION: Predeposition is carried out prior to a process step for depositing the glass film on the substrate to prevent the adhesion of the particles 115 already adhered in a chamber 101 onto the substrate under deposition and gaseous raw material is reacted on the substrate surface without being reacted in a gaseous phase, by which the number of the particles of >=1μm adhered on the substrate is specified to the prescribed number or below. |
申请公布号 |
JP2001348236(A) |
申请公布日期 |
2001.12.18 |
申请号 |
JP20000169068 |
申请日期 |
2000.06.01 |
申请人 |
HITACHI CABLE LTD |
发明人 |
OKUBO HIROYUKI;KOMANO HARUYASU;KASHIMURA SEIICHI |
分类号 |
B01J19/08;C03B19/14;C03B20/00;C23C16/44;G02B6/13;(IPC1-7):C03B19/14 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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