发明名称 FORMING METHOD FOR GLASS FILM SUING PLASMA CHEMICAL VAPOR DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To confine the number of particles of >=1μm adhered on a substrate to a prescribed number or below when forming a glass film by a plasma enhanced CVD method. SOLUTION: Predeposition is carried out prior to a process step for depositing the glass film on the substrate to prevent the adhesion of the particles 115 already adhered in a chamber 101 onto the substrate under deposition and gaseous raw material is reacted on the substrate surface without being reacted in a gaseous phase, by which the number of the particles of >=1μm adhered on the substrate is specified to the prescribed number or below.
申请公布号 JP2001348236(A) 申请公布日期 2001.12.18
申请号 JP20000169068 申请日期 2000.06.01
申请人 HITACHI CABLE LTD 发明人 OKUBO HIROYUKI;KOMANO HARUYASU;KASHIMURA SEIICHI
分类号 B01J19/08;C03B19/14;C03B20/00;C23C16/44;G02B6/13;(IPC1-7):C03B19/14 主分类号 B01J19/08
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