| 摘要 |
PURPOSE: To manufacture a field-effect transistor making low noise by a method wherein the transistor is coated with metallic contact strips forming a source and a drain electrodes in the metallic evaporating process eliminating the alloying process. CONSTITUTION: The intermediate film 9 of a source electrode 7 and a drain electrode 8 is made of an excellent conductive epitaxially grown single crystalline lanthanide arsenide as well as the strips extending in parallel with a metallic film strip 5 serving as a gate electrode. The souse electrode 7 is connected to a source contact with 12 while a drain contact wire 13 corresponding to the wire 12 is connected to the upper surface of an Au plated nickel films 11 of the drain electrode 8. The nickel films 11 are formed into parallel contact paths coated by evaporation eliminating the alloying process on the surfaces of the source electrode 7 and the drain electrode. In such a constitution, the field-effect transistor in high reproducibility making low noise can be manufactured by eliminating the allowing process that requires a high temperature environment. |
