| 摘要 |
<p>The present invention provides a positive photoresist composition which comprises a photosensitive agent (I) comprising an ester of 1,2-naphthoquinonediazide compound with 2,4,4 min -trihydroxybenzophenone which has an average esterification degree of 50 mol% or more and an alkali-soluble novolak resin (II) obtained by condensation of a mixture of m-cresol, p-cresol and xylenol with formaldehyde and a process for forming a resist pattern which comprises coating the positive photoresist composition of claim 1 on a substrate, then heat treating the coat, irradiating the coat with radiation and developing the irradiated coat.</p> |
